Other articles related with "interface states":
87804 Zeng-Ping Su(苏增平), Tong-Tong Wei(魏彤彤), and Yue-Ke Wang(王跃科)
  Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states
    Chin. Phys. B   2022 Vol.31 (8): 87804-087804 [Abstract] (305) [HTML 0 KB] [PDF 3155 KB] (58)
57303 Ling-Mei Zhang(张令梅), Yuan-Yuan Miao(苗圆圆), Zhi-Peng Cao(曹智鹏), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), and Gui-Chao Hu(胡贵超)
  Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions
    Chin. Phys. B   2022 Vol.31 (5): 57303-057303 [Abstract] (289) [HTML 1 KB] [PDF 1700 KB] (79)
48504 Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波)
  Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs
    Chin. Phys. B   2021 Vol.30 (4): 48504- [Abstract] (441) [HTML 1 KB] [PDF 790 KB] (149)
67203 Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬)
  Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric
    Chin. Phys. B   2020 Vol.29 (6): 67203-067203 [Abstract] (640) [HTML 1 KB] [PDF 770 KB] (153)
107101 Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平)
  Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO
    Chin. Phys. B   2017 Vol.26 (10): 107101-107101 [Abstract] (550) [HTML 1 KB] [PDF 1086 KB] (363)
68802 Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴)
  Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells
    Chin. Phys. B   2017 Vol.26 (6): 68802-068802 [Abstract] (706) [HTML 1 KB] [PDF 392 KB] (496)
123101 Hong-Xia Liu(柳红霞), Fu-Ling Tang(汤富领), Hong-Tao Xue(薛红涛), Yu Zhang(张宇), Yu-Wen Cheng(程育汶), Yu-Dong Feng(冯煜东)
  Lattice structures and electronic properties of WZ-CuInS2/WZ-CdS interface from first-principles calculations
    Chin. Phys. B   2016 Vol.25 (12): 123101-123101 [Abstract] (614) [HTML 1 KB] [PDF 3247 KB] (365)
88504 Tang Lan-Feng (汤兰凤), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Qian Hui-Min (钱慧敏), Zhou Dong (周东), Zhang Rong (张荣), Zheng You-Dou (郑有炓), Huang Xiao-Ming (黄晓明)
  Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress
    Chin. Phys. B   2015 Vol.24 (8): 88504-088504 [Abstract] (831) [HTML 1 KB] [PDF 398 KB] (972)
77307 Qian Hui-Min (钱慧敏), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Tang Lan-Feng (汤兰凤), Zhou Dong (周东), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Liao (郑有炓), Huang Xiao-Ming (黄晓明)
  Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors
    Chin. Phys. B   2015 Vol.24 (7): 77307-077307 [Abstract] (656) [HTML 1 KB] [PDF 552 KB] (471)
77301 Tang Fu-Ling (汤富领), Liu Ran (刘冉), Xue Hong-Tao (薛红涛), Lu Wen-Jiang (路文江), Feng Yu-Dong (冯煜东), Rui Zhi-Yuan (芮执元), Huang Min (黄敏)
  Lattice structures and electronic properties of CIGS/CdS interface:First-principles calculations
    Chin. Phys. B   2014 Vol.23 (7): 77301-077301 [Abstract] (512) [HTML 1 KB] [PDF 763 KB] (1269)
47303 H. M. Baran, A. Tataroğlu
  Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements
    Chin. Phys. B   2013 Vol.22 (4): 47303-047303 [Abstract] (636) [HTML 1 KB] [PDF 884 KB] (1904)
97106 Wang Shou-Guo(王守国), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明)
  Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors
    Chin. Phys. B   2010 Vol.19 (9): 97106-097106 [Abstract] (1592) [HTML 0 KB] [PDF 486 KB] (629)
87201 Pang Fei(庞斐), Liang Xue-Jin(梁学锦), Liao Zhao-Liang(廖昭亮), Yin Shu-Li(尹树力), and Chen Dong-Min(陈东敏)
  Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)
    Chin. Phys. B   2010 Vol.19 (8): 87201-087201 [Abstract] (2145) [HTML 1 KB] [PDF 191 KB] (977)
1614 Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨)
  The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact
    Chin. Phys. B   2009 Vol.18 (4): 1614-1617 [Abstract] (1488) [HTML 1 KB] [PDF 171 KB] (834)
1817 Huang Wei-Qi(黄伟其), Xu Li(许丽), Wang Hai-Xu(王海旭), Jin Feng(金峰), Wu Ke-Yue(吴克跃), Liu Shi-Rong(刘世荣), Qin Cao-Jian(秦朝建), and Qin Shui-Jie(秦水介)
  Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser
    Chin. Phys. B   2008 Vol.17 (5): 1817-1820 [Abstract] (1169) [HTML 1 KB] [PDF 523 KB] (663)
1140 Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), Zhang Yue(张月), Yu Lei(于磊), Zhu Zhi-Wei(朱志炜), and Chen Hai-Feng(陈海峰)
  Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs
    Chin. Phys. B   2007 Vol.16 (4): 1140-1144 [Abstract] (1604) [HTML 0 KB] [PDF 267 KB] (979)
3502 Wang Yan-Gang(王彦刚), Xu Ming-Zhen(许铭真), and Tan Chang-Hua(谭长华)
  Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-OSFETs under constant voltage stresses
    Chin. Phys. B   2007 Vol.16 (11): 3502-3506 [Abstract] (1635) [HTML 1 KB] [PDF 882 KB] (563)
1644 Liu Hong-Xia (刘红侠), Hao Yue (郝跃), Hawkins I. D., Peaker A. R.
  Hot-carrier degradation characteristics and explanation in 0.25μm PMOSFETs
    Chin. Phys. B   2005 Vol.14 (8): 1644-1648 [Abstract] (1263) [HTML 1 KB] [PDF 252 KB] (489)
94 Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)
  Parameter extraction for a Ti/4H-SiC Schottky diode
    Chin. Phys. B   2003 Vol.12 (1): 94-96 [Abstract] (1475) [HTML 1 KB] [PDF 216 KB] (620)
189 Ren Hong-xia (任红霞), Hao Yue (郝跃)
  HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS
    Chin. Phys. B   2001 Vol.10 (3): 189-193 [Abstract] (1107) [HTML 0 KB] [PDF 257 KB] (548)
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